Reset-set flipflop based on a novel approach ofmodulatingresonant-tunnelling current with FET gates
- 13 October 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (21) , 1805-1806
- https://doi.org/10.1049/el:19941194
Abstract
A novel approach to modulating resonant-tunnelling current is demonstrated based on the monolithic integration of RTDs and FETs. As an example for circuit application, the first reset-set flipflop circuit using resonant-tunnelling devices is demonstrated.Keywords
This publication has 7 references indexed in Scilit:
- Co-integration of resonant tunneling and double heterojunction bipolar transistors on InPIEEE Electron Device Letters, 1993
- Single transistor static memory cell: Circuit application of a new quantum transistorApplied Physics Letters, 1993
- Monolithic integration of InGaAs/InAlAs resonant tunneling diode and HEMT for single-transistor cell SRAM applicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Applications of resonant-tunneling field-effect transistorsIEEE Electron Device Letters, 1988
- Integration of a resonant-tunneling structure with a metal-semiconductor field-effect transistorApplied Physics Letters, 1987
- An investigation of i-AlGaAs/n-GaAs doped-channel MIS-like FET's (DMT's)—Properties and performance potentialitiesIEEE Transactions on Electron Devices, 1987
- Flip-flop circuit using a resonant-tunnelling hot electron transistor (RHET)Electronics Letters, 1986