Effect of electron irradiation on the non-linear properties of NbSe3

Abstract
The authors have measured the critical electric field above which the charge density wave formed in NbSe3 at 59K can slide freely in the crystal as a function of defects created at helium temperature by irradiation with 3 MeV electrons. In this case, contrary to those of doping with impurities or with proton irradiation, the depinning electric field is only weakly dependent on the defect concentration.

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