Paramagnetic resonance in GaN-based light emitting diodes

• 16 October 1995
• journal article
• Published by AIP Publishing in Applied Physics Letters
• Vol. 67  (16) , 2376-2378
• https://doi.org/10.1063/1.114350

Abstract

Keywords

• ACCEPTORS
• ALUMINIUM NITRIDES
• DEEP ENERGY LEVELS
• ELECTROLUMINESCENCE
• EPR SPECTRA
• GALLIUM NITRIDES
• HETEROSTRUCTURES
• INDIUM NITRIDES
• LIGHT EMITTING DIODES