Two-dimensional analysis of triode-like operation of junction gate FET's

1 November 1975

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 22 (11) , 1047-1049
https://doi.org/10.1109/T-ED.1975.18268

Abstract

Triode-like operation of junction gate FET's is analyzed by two-dimensional computer simulation. Triode-like characteristics are shown to appear with the channel normally off and the depletion layer reaching the drain electrode. Triode-like current arises from carrier injection from the source electrode into the depleted region. Triode-like operation is achieved without intrinsic material.

Keywords

UNCERTAINTY
ELECTRON MOBILITY
NEODYMIUM
COMPUTER SIMULATION
ELECTRODES
DIMENSIONAL ANALYSIS
ELECTRON DENSITY
FIELD EFFECT TRANSISTOR
VOLTAGE

This publication has 0 references indexed in Scilit: