Effect of boron incorporation on the lattice parameter and texture of diamond films deposited by chemical vapour deposition on silicon
- 1 February 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 148 (1-2) , 110-115
- https://doi.org/10.1016/0022-0248(94)00668-7
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Oriented CVD diamond films: twin formation, structure and morphologyDiamond and Related Materials, 1994
- Epitaxial diamond thin films on (001) silicon substratesApplied Physics Letters, 1993
- Heteroepitaxial diamond growth on (100) siliconDiamond and Related Materials, 1993
- Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor depositionApplied Physics Letters, 1992
- (110)-oriented diamond films synthesized by microwave chemical-vapor depositionJournal of Materials Research, 1990
- Measurement of crystalline strain and orientation in diamond films grown by chemical vapor depositionJournal of Materials Research, 1990
- Epitaxial growth of diamond thin films on cubic boron nitride {111} surfaces by dc plasma chemical vapor depositionApplied Physics Letters, 1990
- Texture formation in polycrystalline diamond filmsJournal of Applied Physics, 1990
- Loss of epitaxy during diamond film growth on ordered Ni(100)Journal of Applied Physics, 1989
- On epitaxial growth of diamond films on (100) silicon substratesApplied Physics Letters, 1988