Optical gain in GaSe due to exciton-exciton recombination
- 30 September 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 19 (11) , 1115-1117
- https://doi.org/10.1016/0038-1098(76)90111-3
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Effects of excitation-induced optical absorption in highly excited semiconductorsPhysica Status Solidi (b), 1975
- Exciton-exciton and exciton-carrier scattering in GaSePhysical Review B, 1975
- Luminescence by exciton‐exciton collision in GaSePhysica Status Solidi (b), 1975
- GaSe: A layer compound with anomalous valence band anisotropySolid State Communications, 1974
- Spontaneous and stimulated emission in GaSe under intense excitationSolid State Communications, 1973
- Optical gain in semiconductorsJournal of Luminescence, 1973
- Stimulated Emission of PolaritonsJournal of Applied Physics, 1972
- Kinetics of Excitons in CdS at TemperaturePhysical Review B, 1970