A broad-beam electron cyclotron resonance ion source for sputtering etching and deposition of material

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Abstract
A broad‐beam electron cyclotron resonanceion source for sputteringetching and deposition of material has been designed and constructed. The source uses a 1‐kW magnetron at 2.45 GHz and can operate at an argon gas pressure of <0.1 Pa (7.5×10− 4 Torr). Plasma ion density of 0.45 to 1×101 2 cm− 3 and electron temperatures of 7.5 to 11 eV have been obtained. Based on these results and the free fall ion diffusion theory, the calculated ion current density in the source varies from 15 to 30 mA/cm2. The source is also capable of producing a uniform ion beamcurrent density of 0.5 to 1.5 mA/cm2 using an array of grids at an energy range of 100 to 1000 V. The ion beam uniformity varies between ±3% and ±5% across 76–140 mm diameter of the extracted ion beam. Of particular note are the long lifetime and ease of operation.

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