Recent Observations on VLSI Bond Pad Corrosion Kinetics
- 1 March 1988
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 135 (3) , 661-665
- https://doi.org/10.1149/1.2095701
Abstract
The kinetics of chlorine‐induced bond pad corrosion of VLSI Al‐Si metallization have been investigated. A generalized time‐to‐failure model is presented for the failure mechanism, and both the humidity and temperature dependence are discussed. An exponential humidity acceleration parameter of 0.15 (%RH)−1 and an activation energy of 0.75 eV were determined during this investigation.Keywords
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