Direct observation of atomic structures and reconstructions of silicon surfaces: A field-ion-microscope study

Publisher Website
Google Scholar
Abstract
Well-ordered atomic structures of silicon surfaces have been obtained with the field-ion microscope for the first time. Two distinctive atomic structures coexist for the {130} surface. These two structures can be formed by slightly different lateral displacements of atoms in the (1×1) layer. The {123} surface shows a rhombic structure with an angle of 79±3°. Two-dimensional defects can also be seen in all these surfaces. An atom-probe analysis shows that no impurity atoms are present in these surfaces.