GaInAsP dual wavelength laser
- 8 December 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (25) , 1565-1566
- https://doi.org/10.1049/el:19881067
Abstract
The fabrication and performance characteristics of a dual wavelength laser emitting near 1.3 μm and 1.55 μm are described. The lasers are of the etched mesa buried heterostructure type, and utilise semi-insulating InP layers both for lateral optical confinement and current confinement. The 1.55 μm emission is at a single wavelength by virtue of the frequency selective feedback provided by a grating etched on the substrate. The lasers have threshold currents in the 20 to 40 mA range, and have quantum efficiencies comparable to single emitter lasers.Keywords
This publication has 1 reference indexed in Scilit:
- Long-Wavelength Semiconductor LasersPublished by Springer Nature ,1986