Molecular-beam epitaxial growth of graded band-gap quaternary GaxAlyIn1−x−yAs multilayer heterostructures on InP: Application to a novel avalanche photodiode with an ultrahigh ionization ratio
- 1 May 1987
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 5 (3) , 802-807
- https://doi.org/10.1116/1.583755