Gettering of epitaxial gallium phosphide using phosphosilicate glass
- 8 November 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (23) , 748-749
- https://doi.org/10.1049/el:19790535
Abstract
Chemically vapour deposited phosphosilicate glass films were used to getter epitaxial gallium-phosphide layers. Significant improvements in the electroluminescent efficiency of yellow light-emitting diodes fabricated from the gettered material were observed. Results suggest that the gettering removes compensating impurities as well defects which influence minority carrier lifetime.Keywords
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