Chemical trends of the luminescence in wide band gap II1−xMnxVI semimagnetic semiconductors
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 931-935
- https://doi.org/10.1016/0022-0248(90)91109-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- On the Excitation and Emission of the Infrared Luminescence of Wide Band Gap Mn II–VI Semimagnetic SemiconductorsPhysica Status Solidi (b), 1989
- The luminescence of the semimagnetic semiconductor Zn1-xMnxSeSemiconductor Science and Technology, 1989
- Energy gap, excitonic, and ‘‘internal’’optical transition in Mn-based II-VI diluted magnetic semiconductorsPhysical Review B, 1988
- Optical Properties of (Zn, Mn) and (Cd, Mn) Chalcogenide Mixed Crystals and SuperlatticesPhysica Status Solidi (b), 1988
- Time‐Resolved Spectroscopy of the Low‐Energy Emission Bands of Highly Doped Zn1–xMnxSPhysica Status Solidi (b), 1987
- Position and Lifetime of Photoluminescence in Cd1−xMnxTe and Zn1−xMnxTe. Exchange Dependent EffectsPhysica Status Solidi (b), 1986
- Excitation Spectra of Photoluminescence Bands in Cd1–xMnx TePhysica Status Solidi (b), 1984
- Study of the 2.0-eV photoluminescence band insemiconductor alloysPhysical Review B, 1982
- Photoluminescence studies of the Mn2+ d-levels in Cd1−xMnxTeApplied Physics Letters, 1981
- Time resolved spectroscopy of ZnS : Mn by dye laser techniqueJournal of Luminescence, 1976