Lateral variation of indium content in InGaAs grown on GaAs channeled substrates by molecular beam epitaxy
- 1 March 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 12 (2) , 1102-1105
- https://doi.org/10.1116/1.587098
Abstract
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