Microelectromechanical tuneable filters with 0.47nm linewidth and 70 nm tuning range

Abstract
Microelectromechanical filters were fabricated by selective oxidation of AlAs layers in a GaAlAs/AlAs Fabry-Perot structure and by removing the GaAs sacrificial layer. The device exhibits a 3 dB linewidth of 0.47 nm, a tuning range of more than 70 nm and < 1 dB insertion loss. The structure exhibits frequency response of 500 KHz at a 3 dB cutoff point.