Investigation into the re-use of PMOS dosimeters
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (3) , 445-451
- https://doi.org/10.1109/23.299782
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devicesJournal of Applied Physics, 1993
- Effect of bias on thermally stimulated current (TSC) in irradiated MOS devicesIEEE Transactions on Nuclear Science, 1991
- Modeling the anneal of radiation-induced trapped holes in a varying thermal environmentIEEE Transactions on Nuclear Science, 1990
- Physical Mechanisms Contributing to Device "Rebound"IEEE Transactions on Nuclear Science, 1984
- The Mechanisms of Small Instabilities in Irradiated MOS TransistorsIEEE Transactions on Nuclear Science, 1983
- The Role of Hydrogen in SiO2 Films on SiliconJournal of the Electrochemical Society, 1979
- Electron trapping in SiO2 due to electron-beam deposition of aluminumJournal of Applied Physics, 1978
- Electron trapping in electron-beam irradiated SiO2Journal of Applied Physics, 1978
- Electron trapping by radiation-induced charge in MOS devicesJournal of Applied Physics, 1976
- The Current Understanding of Charges in the Thermally Oxidized Silicon StructureJournal of the Electrochemical Society, 1974