Model of electronic processes in glassy semiconductors: Correlation with structural features
- 31 March 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 45 (11) , 949-953
- https://doi.org/10.1016/0038-1098(83)90963-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Atomic tunneling states and low-temperature anomalies of thermal properties in amorphous materialsSolid State Communications, 1982
- A model of photostructural changes in chalcogenide vitreous semiconductors: 1. Theoretical considerationsJournal of Non-Crystalline Solids, 1981
- Spectral and thermodynamic properties of electrons in mobility gap states of covalent glassesSolid State Communications, 1981
- Excitations and metastability in amorphous semiconductorsPhilosophical Magazine Part B, 1981
- Topological model for non-radiative carrier decay in chalcogenide alloy glassesJournal of Non-Crystalline Solids, 1980
- Spectral analysis of the fatigue of the photoluminescence and of the creation of paramagnetic centres in amorphous Ge x Se1–x Philosophical Magazine Part B, 1980
- Photoinduced Defects in Chalcogenide GlassesPhysical Review Letters, 1980
- Reversible photostructural change: Mechanisms, properties and applicationsJournal of Non-Crystalline Solids, 1980
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975