Trap-Limited Migration of Si Self-Interstitials at Room Temperature
- 26 February 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 76 (9) , 1493-1496
- https://doi.org/10.1103/physrevlett.76.1493
Abstract
We have investigated the room temperature diffusion and trapping phenomena of ion-generated point defects in crystalline Si. The point defects, injected by low energy Si, Ge, and Pt implants into the bulk of silicon wafers, were monitored measuring the defect-induced dopant deactivation by spreading resistance profiling. Dopant deactivation is detected up to depths of several microns beyond the region directly modified by the ions. It is demonstrated that long-range migration of Si self-interstitials is responsible for the observed phenomena.Keywords
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