Set of five related photoluminescence defects in silicon formed through nitrogen-carbon interactions

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Abstract
We study four new defect photoluminescence lines N2 (758.0 meV), N3 (761.5 meV), N4 (767.4 meV), and N5 (772.4 meV) appearing in silicon after nitrogen implantation. The defects are closely related to the N1 (745.6 meV) defect recently associated with single nitrogen and carbon atoms. It is demonstrated here by annealing studies and isotope shifts that the new defects incorporate nitrogen and carbon as well, and that N3, N4, and N5 defects need additional interactions with other impurities (probably oxygen) to form. The optical properties suggest that N1–N5 defects form a set of defects with similar basic N-C configurations.