The field-dependence of carrier mobility in silicon and germanium
- 1 January 1960
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 12 (2) , 175-180
- https://doi.org/10.1016/0022-3697(60)90034-2
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- The influence of interelectronic collisions on conduction and breakdown in covalent semi-conductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953