Low-temperature gate dielectrics formed by plasma anodisation of silicon nitride
- 29 September 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (20) , 1269-1270
- https://doi.org/10.1049/el:19880864
Abstract
Silicon nitrides, deposited on silicon by PECVD using an SiH4/NH3 plasma at 300°C, were anodised in an oxygen plasma at 500°C. The resulting dielectric appears to have lower fixed charge, leakage current and interface trap density than the original PECVD nitride, and to have the potential of use as a gate dielectric for MIS devices in VLSI circuits.Keywords
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