Electron beam annealing of semiconductors by means of a specifically designed electron gun
- 30 September 1983
- journal article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 9 (1-3) , 285-294
- https://doi.org/10.1016/0254-0584(82)90026-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Self-annealing of ion-implanted silicon: First experimental resultsApplied Physics Letters, 1981
- Ion beam annealing of semiconductorsApplied Physics Letters, 1980
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977