Schottky barrier diodes for low noise mixing in the far infrared
- 1 May 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (9) , 525-527
- https://doi.org/10.1063/1.90143
Abstract
Contributions from semiconductor plasma resonance and skin effect to the series resistance of Schottky barrier diodes are incorporated in a calculation of conversion loss for the submillimeter region. The calculation includes both intrinsic and parasitic losses and shows the conversion loss to be strongly dependent upon frequency of operation and upon diode diameter. At higher frequencies mixer performance may be optimized by careful choice of epitaxial carrier concentration and of diode size.Keywords
This publication has 4 references indexed in Scilit:
- Submillimeter-Wave Detection with Submicron-Size Schottky-Barrier DiodesIEEE Transactions on Microwave Theory and Techniques, 1977
- Extension of the Schottky barrier detector to 70 μm (4.3 THz) using submicron-dimensional contactsApplied Physics Letters, 1977
- Conversion Loss Limitations on Schottky-Barrier Mixers (Short Papers)IEEE Transactions on Microwave Theory and Techniques, 1977
- Schottky-Diode Realization for Low-Noise Mixing at Millimeter WavelengthsIEEE Transactions on Microwave Theory and Techniques, 1976