Thermal expansion reference data: silicon 300-850 K
- 14 October 1981
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 14 (10) , L163-L166
- https://doi.org/10.1088/0022-3727/14/10/003
Abstract
Measurements of the coefficient of linear thermal expansion of pure polycrystalline silicon were made with a polarization interferometer and a platinum resistance thermometer with an estimated error of less than 0.01 × 10-6 K-1.Keywords
This publication has 4 references indexed in Scilit:
- Linear thermal expansion measurements on silicon from 6 to 340 KJournal of Applied Physics, 1977
- Precise measurement of the thermal expansion of silicon near 40 °CJournal of Applied Physics, 1976
- Absolute dilatometry using a polarization interferometerJournal of Physics E: Scientific Instruments, 1975
- Thermal Expansion of Silicon and Zinc Oxide (I)Physica Status Solidi (b), 1969