Low temperature interdiffusion in the HgCdTe/CdTe system, studied at near-atomic resolution

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Abstract
By combining chemical lattice imaging and vector pattern recognition we determine, as a function of annealing temperature, the composition of individual atomic planes across each HgCdTe/CdTe interface of a multiquantum well stack. The resultant composition profiles, which directly reveal the chemical change across each interface at near atomic resolution, are analyzed in terms of linear and nonlinear diffusion theory, to deduce the interdiffusion coefficient and its activation energy. We find the interdiffusion coefficient to be nonlinear, and a sensitive function of the interface depth beneath the surface.

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