A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices
- 15 October 2006
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 527-529, 1313-1316
- https://doi.org/10.4028/www.scientific.net/msf.527-529.1313
Abstract
Gate oxide reliability measurements of 4H-SiC DMOSFETs were performed using the Time Dependent Dielectric Breakdown (TDDB) technique at 175°C. The oxide lifetime is then plotted as a function of the electric field. The results show the projected oxide lifetime to be > 100 years at an operating field of ~3 MV/cm. Device reliability of 2.0 kV DMOSFETs was studied by stressing the gate with a constant gate voltage of +15 V at a temperature of 175°C, and monitoring the forward I-V characteristics and threshold voltage for device stability. Our very first measurements show very little variation between the pre-stress and post-stress conditions up to 1000 hrs of operation at 175°C. In addition, forward on-current stressing of the MOSFETs show the devices to be stable up to 1000 hrs of operation.Keywords
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