Capacitance transient analysis of molecular-beam epitaxial n-In0.53Ga0.47As and n-In0.52Al0.48 As
- 1 May 1987
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 5 (3) , 796-799
- https://doi.org/10.1116/1.583753
Abstract
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