Microwave characterisation of microstrip lines and spiral inductors in MCM-D technology
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 823-829
- https://doi.org/10.1109/ectc.1992.204301
Abstract
MCM-D (multichip module-D) technology comprising a four-level metallization, aluminum-polyimide structure defined on a silicon substrate is considered. A dedicated microwave characterization layout was designed and implemented, which included a series of microstrip lines, spiral inductors, microstrip coupling structures, ring resonators, and microwave calibration structures. Analog measurements of these structures were then carried out using RF-on-wafer methods at frequencies from 0.5 to 20 GHz. Equivalent circuit models were derived which gave a close fit to the experimental measurements, and a range of transmission line and spiral inductor components was characterized. Useful analog transmission line behavior was indicated for 10-mm line lengths to 10 GHz, while inductors were measured with primary inductances approaching 10 nH with useful Q values in the 1 -3-GHz region. Layout rules for low crosstalk were also devised. The lower metallization resistance and increased dielectric separation from the silicon substrate resulted in improved performance for these MCM-D inductors in comparison with on-chip inductors of comparable inductance.Keywords
This publication has 12 references indexed in Scilit:
- A series of demonstrators to assess technologies for silicon hybrid multichip modulesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Ultra-reliable packaging for silicon-on-silicon WSIPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Applications of multichip modules for high speed communications interfacesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Silicon substrate test structures for hybrid wafer scale technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Passive-silicon-carrier design and characteristicsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A Si bipolar monolithic RF bandpass amplifierIEEE Journal of Solid-State Circuits, 1992
- Microwave dielectric constant of a low temperature cofired ceramicIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1991
- Si IC-compatible inductors and LC passive filtersIEEE Journal of Solid-State Circuits, 1990
- Cost-Density Analysis of InterconnectionsIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1987
- Design of Planar Rectangular Microelectronic InductorsIEEE Transactions on Parts, Hybrids, and Packaging, 1974