Theoretical and Experimental Study of Subsurface Burnout and ESD in GaAs FETs AND HEMTs
- 1 April 1987
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 8th Reliability Physics Symposium
- No. 07350791,p. 181-190
- https://doi.org/10.1109/irps.1987.362176
Abstract
The phenomena of subsurface burnout in GaAs FETs and HEMTS is explained in terms of the hot-electron distribution within the device induced by high-voltage pulses, high d.c. power and high dose of ionizing radiation. Our two-dimensional numerical results and all experimental evidence, including some recent experiments on electrostatic discharge (ESD) thresholds for GaAs FETs, supports a unified mechanism leading to subsurface burnout, under physically different adverse operating conditions. These results further suggest various ways to design burnout-hardened devices.Keywords
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