Self-Formed In0.5Ga0.5As Quantum Dots on GaAs Substrates Emitting at 1.3 µm
- 1 December 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (12A) , L1710
- https://doi.org/10.1143/jjap.33.l1710
Abstract
We grew 1.3-µm emitting self-formed In0.5Ga0.5As quantum dots on GaAs substrates by supplying InAs and GaAs monolayers alternately during atomic layer epitaxy. The dots were 20 nm in diameter and 10 nm in height, and were surrounded by In0.1Ga0.9As in the lateral direction and by GaAs perpendicular to the dots. Diamagnetic energy shifts of excitons in the dots clearly demonstrated three-dimensional quantum confinement.Keywords
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