Submicron Grating Fabrication On Gaas By Holographic Exposure

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Abstract
The laboratory techniques used for the fabrication of sub-micron gratings in GaAs are presented. A thin (~ 1250 A) film of Shipley AZ1450B photoresist on GaAs is exposed holographically with the use of the 4579 A line of an argon ion laser to produce gratings with a period of approximately 0.35 um. Data are presented that demonstrate the effects of variation of the following parameters: developer type, developer time, laser intensity, exposure time, photoresist thickness, and ion beam etching parameters. Grating efficiency measurements as a function of parameter variations indicate an optimum set of parameters for grating fabrication.

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