Low Energy Electron Beam Lithography

Publisher Website
Google Scholar
Abstract
The two most serious problems in electron beam lithography are proximity effects and slow throughput. The former arises from the penetration of the electrons which, at conventional electron energies, can greatly exceed the size of the exposure element. Thus much of the exposing electron's energy is wasted. The use of electrons whose energy is much lower results in a much more compact area of exposure and should result in improved linewidth control and in more efficient use of the exposing power.

This publication has 0 references indexed in Scilit: