Electron and hole transport in amorphous As2Se3
- 1 August 1978
- journal article
- other
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 38 (2) , 191-195
- https://doi.org/10.1080/13642817808245675
Abstract
The model of charged defects is used to interpret transport experiments in As2Se3. An explanation is given for the observation of two activation energies in the hole mobility at different experimental time scales, and for the absence of electron transport.Keywords
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