Optical properties of free-standing silicon quantum wires
- 18 May 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (20) , 2525-2527
- https://doi.org/10.1063/1.106927
Abstract
We present theoretical studies of the optical properties of free‐standing Si quantum wires, using an empirical tight‐binding model which includes d orbitals and second‐neighbor interactions. The excitonic effects are included within the effective‐mass approximation. The predicted exciton transition energy for a quantum wire with a width of 27 Å agrees with the observed luminescence for a sample of similar size. We found that the thermally averaged exciton oscillator strengths for quantum wires with widths around 8 Å can become comparable to that of bulk GaAs.Keywords
This publication has 7 references indexed in Scilit:
- 50-nm Metal Line Fabrication by Focused Ion Beam and Oxide ResistsJapanese Journal of Applied Physics, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Theory of dielectric-function anisotropies of (001) GaAs (2×1) surfacesPhysical Review B, 1990
- Giant oscillator strength of free excitons in GaAsPhysical Review B, 1987
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Calculation of the Reflectivity, Modulated Reflectivity, and Band Structure of GaAs, GaP, ZnSe, and ZnSPhysical Review B, 1969