An optimal annealing technique for ohmic contacts to ion-implanted n-layers in semi-insulating indium phosphide
- 31 March 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (3) , 253-258
- https://doi.org/10.1016/0038-1101(87)90180-8
Abstract
No abstract availableKeywords
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