Electronic structure of highly fluorinated
- 15 January 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (3) , 1589-1592
- https://doi.org/10.1103/physrevb.47.1589
Abstract
Synchrotron-radiation photoemission was used to investigate the valence bands and C 1s core-level features of thin films of , x=46±2. The valence-band spectra show seven distinct features and a bandwidth of ∼12 eV. Comparison of the calculated and experimental 40-eV photoemission spectra and the C 1s core-level shifts suggests that the CF bond distances are closer to those of fluoromethane than to those of icosahedral optimized within the local-density approximation. The valence-band maximum is ∼5 eV below the Fermi level , indicating that is a wide-band-gap insulator. The deposition of potassium atoms on these fluorinated films results in the partial removal of fluorine to form KF.
Keywords
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