The growth of germanium oxide on thin gold layers on germanium substrates

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Abstract
Isolated GeO2 centers have been observed to grown on the surface of this (≳200 Å) evaporated Au layers covering Ge single-crystal substrates. This effect is strongly enhanced in the presence of water vapor but depressed if an oxide layer forms on the Ge before the Au evaporation. The effect has been examined for samples activated in air at room temperature, 100 and 200 °C, and for 〈100〉 and 〈111〉 oriented substrates, using optical microscopy, scanning electron microscopy, X-ray diffraction and Rutherford backscattering. The relevance of this work to the long-term storage of high purity Ge nuclear radiation detectors is indicated.

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