An In-Doped Dislocation-Free GaAs Layer Grown by MBE on In-Doped GaAs Substrate
- 1 April 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (4A) , L303
- https://doi.org/10.1143/jjap.25.l303
Abstract
A dislocation-free GaAs epitaxial layer without propagating dislocations from a substrate or misfit dislocations is developed on an indium-doped semi-insulating GaAs substrate by molecular beam epitaxy (MBE). The epitaxial layer is doped with indium to reduce lattice mismatch between the layer and substrate. Photoluminescence measurements confirm that the indium-doped dislocation-free GaAs epitaxial layer has good photoluminescence efficiency. This dislocation-free GaAs epitaxial layer promises to play an important role in achieving a GaAs/AlGaAs optoelectric integrated circuit (OEIC).Keywords
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