Light scattering study of electrons confined at Ge/GaAs interfaces
- 1 July 1982
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 21 (2) , 516-518
- https://doi.org/10.1116/1.571750
Abstract
Resonant inelastic light scattering experiments in Ge/GaAs interfaces show a new spectral band associated with quasi-two-dimensional electron states in a Ge-accumulation layer. A theoretical fit of the position and shape of this structure indicates that it is due to interband transitions between a quasi-two-dimensional band and the continuum.Keywords
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