Secondary ion mass spectrometry profiling of shallow, implanted layers using quadrupole and magnetic sector instruments

Publisher Website
Google Scholar
Abstract
The analysis of shallow, steeply varying profiles, using secondary ion mass spectrometry with quadrupole and magnetic sector instruments, is described. The problems in generating a reliable profile, free of transient effects, and ion beam induced displacements and broadening effects, in both types of instruments are discussed. The most important conclusion is that one should be capable of varying the primary beam energy, primary mass, the angle of incidence, and the polarity of the secondary ions independently of each other. We also report the use of special experimental conditions which circumvent some of the problems posed in magnetic sector instruments; low-energy Cs beams (down to 1 keV) are used in combination with sensitive detection of positive secondary ions. Finally, it is shown that for a 5-kV As+ implanted Si specimen all the projected ranges and decay lengths of the profiles, measured with different primary masses, angles of incidence, and primary energies, can be correlated in a universal curve which has the penetration depth of the primary ion as the basic parameter. The effect of the ambient pressure on the results is also described.

This publication has 0 references indexed in Scilit: