Density of states in impurity bands
- 1 November 1972
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 26 (5) , 1239-1241
- https://doi.org/10.1080/14786437208227379
Abstract
A simple H2 + ion model of interaction between impurities in a doped semiconductor is used to calculate the density of states by a Green function method. Numerical results are given for a concentration typical of InSb at the metal-insulator transition.Keywords
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