Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching

1 September 1982

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 21 (9A) , L537
https://doi.org/10.1143/jjap.21.l537

Abstract

Characteristics for damage introduced in GaAs by Reactive Ion Beam Etching (RIBE) are reported. RIBE introduced damage has mostly been recovered by low temperature annealing around 300°C. This recovery includes diffusion of and reduction in carrier killer.

Keywords

DAMAGE INTRODUCED
GAAS
ION BEAM
BEAM ETCHING
REACTIVE ION
RIBE
ANNEALING BEHAVIOR
ETCHING CHARACTERISTICS

This publication has 1 reference indexed in Scilit:

Si and SiO₂Etching Characteristics by Fluorocarbon Ion Beam
Japanese Journal of Applied Physics, 1979