Synthesis, characterization and modeling of high quality ferromagnetic Cr-doped AlN thin films

Preprint

18 December 2002

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0212459

Abstract

We report a theoretical and experimental investigation of Cr-doped AlN. Density functional calculations predict that the isolated Cr t2 defect level in AlN is 1/3 full, falls approximately at midgap, and broadens into an impurity band for concentrations over 5%. Substitutional Al1-xCrxN random alloys with 0.05 <= x <= 0.15 are predicted to have Curie temperatures over 600 K. Experimentally, we have characterized and optimized the molecular beam epitaxy thin film growth process, and observed room temperature ferromagnetism with a coercive field, Hc, of 120 Oersted. The measured magnetic susceptibility indicates that over 33% of the Cr is magnetically active at room temperature and 40% at low temperature.

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Version 1, 2002-12-18, ArXiv
Published version: Applied Physics Letters, 82 (18), 3047.

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