α-factor improvements in high-speed p -doped In _0.35 Ga _0.65 As/GaAs MQW lasers

16 September 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (19) , 1685-1686
https://doi.org/10.1049/el:19931121

Abstract

The authors investigate experimentally for the first time the improvements in the linewidth enhancement factor, α, resulting from simultaneous addition of strain and p-doping in high-speed GaAs-based multiquantum well lasers. The α factor is determined from measured changes in both gain and refractive index as a function of CW bias current, yielding α 3.1 and 1.4 at the threshold lasing wavelength for unstrained GaAs/Al_0.25Ga_0.75As and p-doped strained In_0.35Ga_0.65As/GaAs devices, respectively.

Keywords

CW BIAS CURRENT
LINEWIDTH ENHANCEMENT FACTOR
ALPHA FACTOR
MQW LASERS
HIGH-SPEED P DOPED IN0.35GA 0.65AS/GAAS
REFRACTIVE INDEX
IN0.35GA0.65AS-GAAS
GAAS-AL0.25GA0.75AS
MULTIQUANTUM WELL LASERS
THRESHOLD LASING WAVELENGTH
Α FACTOR IMPROVEMENTS
STRAIN
P-DOPING
GAIN

α-factor improvements in high-speed p -doped In 0.35 Ga 0.65 As/GaAs MQW lasers

Abstract

Keywords

α-factor improvements in high-speed p -doped In _0.35 Ga _0.65 As/GaAs MQW lasers