Electron-electron scattering: Collision integral and relaxation rate
- 15 August 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (5) , 3191-3196
- https://doi.org/10.1103/physrevb.40.3191
Abstract
We derive a simple formula for the nonequilibrium, electron-electron relaxation rate 1/ in nondegenerate semiconductors, starting from the collision integral (k). Numerical evaluation of the rate of quadrupole-moment relaxation confirms the magnitude and dependence of 1/ on carrier temperature and density. For highly elongated distributions, the thermal current relaxes more slowly than the quadrupole moment, indicating a limitation of the relaxation-time approach. Exchange scattering makes a negligible contribution to 1/ in the low-density limit.
Keywords
This publication has 16 references indexed in Scilit:
- Femtosecond Photon Echoes from Band-to-Band Transitions in GaAsPhysical Review Letters, 1988
- Femtosecond Carrier Thermalization in Dense Fermi SeasPhysical Review Letters, 1988
- Femtosecond dynamics of highly excited carriers in AlxGa1−xAsApplied Physics Letters, 1987
- Femtosecond carrier dynamics in GaAsApplied Physics Letters, 1987
- Femtosecond optical measurement of hot-carrier relaxation in GaAs, AlGaAs, and GaAs/AlGaAs multiple quantum well structuresApplied Physics Letters, 1986
- dc performance of ballistic tunneling hot-electron transfer amplifiersApplied Physics Letters, 1986
- ‘‘Ballistic’’ injection devices in semiconductorsApplied Physics Letters, 1986
- Direct Observation of Ballistic Transport in GaAsPhysical Review Letters, 1985
- Subpicosecond Spectral Hole Burning Due to Nonthermalized Photoexcited Carriers in GaAsPhysical Review Letters, 1985
- Injected-Hot-Electron Transport in GaAsPhysical Review Letters, 1985