3-level conduction-band structure of GaAs from high-stress and high-field measurements

20 January 1977

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 13 (2) , 46-48
https://doi.org/10.1049/el:19770033

Abstract

Experimental and theoretical studies of both the hydrostatic pressure and uniaxial stress dependence of transferred-electron effects have shown that the L_1c are below the X_1c minima in GaAs. These are presented and compared with most recent optical measurements. The inferred electrical properties of GaAs and its alloys are discussed.

Keywords

GAAS
HYDROSTATIC PRESSURE DEPENDENCE
THREE LEVEL CONDUCTION BAND STRUCTURE
UNIAXIAL STRESS DEPENDENCE
TRANSFERRED ELECTRON EFFECTS

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