Observation of the Correlated Discrete Single-Electron Tunneling

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Abstract
We have observed large oscillations in the dc I–V curves of special tunnel junctions containing submicron indium grains embedded between two continuous thin-film electrodes. The effect is identified as a result of the correlated discrete transfer of electrons through a pair of tunnel junctions formed between a single grain and the electrodes. The experiments have also proved feasibility of ultrasensitive (sub-electron) electrometry based on the discrete correlated tunneling.

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