Laser-assisted deposition of BN films on InP for MIS applications

9 November 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (23) , 1602-1603
https://doi.org/10.1049/el:19891075

Abstract

Thin films of boron nitride (500–1000Å) were deposited on InP using a Q-switched ruby laser. Films were found to have a dielectric constant of 3.28, resistivity of 5 ×10¹¹Ωcm and bandgap of 4.1eV. The minimum interface state density for the Al/BN/InP system was 6.2 × 10¹⁰ cm^-2^-1 0.5 below the conduction band.

Keywords

AL-BN-INP
AL2O3:CR LASER
500 GOHMCM
SEMICONDUCTORS
DIELECTRIC CONSTANT
Q-SWITCHED LASER
INTERFACE STATE DENSITY
500 TO 1000 A
BANDGAP
GATE INSULATORS
4.1 EV

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