Soft-X-ray electroreflectance: Final-state effects on Si (2p) optical transitions
- 1 June 1977
- journal article
- research article
- Published by Springer Nature in Il Nuovo Cimento B (1971-1996)
- Vol. 39 (2) , 409-416
- https://doi.org/10.1007/bf02725767
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Empty semiconductor surface states: Core‐level photoyield studiesJournal of Vacuum Science and Technology, 1977
- Reflectivity Measurements near the L2,3Edge ofpandn-type SiliconJapanese Journal of Applied Physics, 1975
- Theory of core excitons in semiconductorsSolid State Communications, 1975
- Electroreflectance of GaP to 27 eVPhysical Review Letters, 1974
- Interband critical-point symmetry from electroreflectance spectraSurface Science, 1973
- Core Excitons and the Soft-X-Ray Threshold of SiliconPhysical Review Letters, 1972
- Close Similarity between Photoelectric Yield and Photoabsorption Spectra in the Soft-X-Ray RangePhysical Review Letters, 1972
- Linearized Third-Derivative Spectroscopy with Depletion-Barrier ModulationPhysical Review Letters, 1972
- Extreme Ultraviolet Transmission of Crystalline and Amorphous SiliconPhysical Review Letters, 1972
- Wannier Exciton in an Electric Field. I. Optical Absorption by Bound and Continuum StatesPhysical Review B, 1970