Growth and Characterization of GaAs Films from Tris(di-tert-butylarsino)gallane

• 1 June 1994
• journal article
• research article
• Published by American Chemical Society (ACS) in Chemistry of Materials
• Vol. 6  (6) , 871-874
• https://doi.org/10.1021/cm00042a028

Abstract

Keywords

• ENERGY DISPERSIVE SPECTROSCOPY
• GALLIUM ARSENIDE
• MATERIALS SCIENCE
• SECONDARY ION MASS SPECTROMETRY